2SD874A transistor (npn) features power dissipation p cm: 500 mw (tamb=25 ) collector current i cm: 1 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 2 ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 20 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 4 v, i c =0 0.1 a h fe(1) v ce = 10 v, i c = 500 ma 85 340 dc current gain h fe(2) v ce = 5 v, i c = 1 a 50 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.4 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 1.2 v transition frequency f t v ce = 10 v, i c = 50 ma, f=200mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 20 pf classification of h fe(1) rank q r s range 85-170 120-240 170-340 marking yq yr ys sot-89 1. base 2. collector 3. emitter 1 2 3 2SD874A http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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